Surface morphology of erbium silicide
- 1 July 1982
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 41 (1), 77-80
- https://doi.org/10.1063/1.93295
Abstract
The surface of rare-earth silicides (Er, Tb, etc.), formed by the reaction of thin-film metal layers with a silicon substrate, is typically dominated by deep penetrating, regularly shaped pits. These pits may have a detrimental effect on the electronic performance of low Schottky barrier height diodes utilizing such silicides on n-type Si. This study suggests that contamination at the metal-Si or silicide-Si interface is the primary cause of surface pitting. Surface pits may be reduced in density or eliminated entirely through either the use of Si substrate surfaces prepared under ultrahigh vacuum conditions prior to metal deposition and silicide formation or by means of ion irradiation techniques. Silicide layers formed by these techniques possess an almost planar morphology.Keywords
This publication has 10 references indexed in Scilit:
- Improvement of thermally formed nickel silicide by ion irradiationJournal of Vacuum Science and Technology, 1982
- The composition of oxides grown on PbInAu films by rf oxidationJournal of Vacuum Science and Technology, 1982
- The Schottky-barrier height of the contacts between some rare-earth metals (and silicides) and p-type siliconApplied Physics Letters, 1981
- Low Schottky barrier of rare-earth silicide on n-SiApplied Physics Letters, 1981
- Contact reaction between Si and rare earth metalsApplied Physics Letters, 1981
- Diffusion marker experiments with rare-earth silicides and germanides: Relative mobilities of the two atom speciesJournal of Applied Physics, 1981
- Ion-beam-induced modification of silicide formation in rare-earth metals: Er-Si and Tb-Si systemsApplied Physics Letters, 1980
- Epitaxial growth of Si deposited on (100) SiApplied Physics Letters, 1980
- The formation of silicides from thin films of some rare-earth metalsApplied Physics Letters, 1980
- Oxide Growth on Etched Silicon in Air at Room TemperatureJournal of the Electrochemical Society, 1975