Tunable superlattice p-i-n photodetectors: characteristics, theory, and application
- 1 May 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 24 (5), 787-801
- https://doi.org/10.1109/3.195
Abstract
Extended measurements and theory on the recently developed monolithic wavelength demultiplexer consisting of voltage-tunable superlattice p-i-n photodetectors in a waveguide confirmation are discussed. It is shown that the device is able to demultiplex and detect two optical signals with a wavelength separation of 20 nm directly into different electrical channels at a data rate of 1 Gb/s and with a crosstalk attenuation varying between 20 and 28 dB, depending on the polarization. The minimum acceptable crosstalk attenuation at a data rate of 100 Mb/s is determined to be 10 dB. The feasibility of using the device as a polarization angle sensor for linearly polarized light is also demonstrated. A theory for the emission of photogenerated carriers out of the quantum wells is included, since this is potentially a speed limiting mechanism in these detectors. It is shown that a theory of thermally assisted tunneling by polar optical phonon interaction is able to predict emission times consistent with the observed temporal response.<>Keywords
This publication has 56 references indexed in Scilit:
- Anisotropic electroabsorption and optical modulation in InGaAs/InAlAs multiple quantum well structuresIEEE Journal of Quantum Electronics, 1986
- Field-dependent linewidths and photoluminescence energies in GaAs-AlGaAs multiquantum well modulatorsApplied Physics Letters, 1986
- Strong polarization-sensitive electroabsorption in GaAs/AlGaAs quantum well waveguidesApplied Physics Letters, 1985
- Electric field induced shifts and lifetimes in GaAs-GaAlAs quantum wellsApplied Physics Letters, 1985
- Electronic structure of an isolated GaAs-GaAlAs quantum well in a strong electric fieldPhysical Review B, 1985
- Electric-field-induced dissociation of excitons in semiconductor quantum wellsPhysical Review B, 1985
- Excitonic Absorption Spectra of GaAs–AlAs Superlattice at High TemperatureJapanese Journal of Applied Physics, 1984
- Energy levels of Wannier excitons in quantum-well structuresPhysical Review B, 1984
- Characterization of high purity GaAs grown by molecular beam epitaxyApplied Physics Letters, 1982
- Optical characterization of interface disorder in multi-quantum well structuresSolid State Communications, 1981