Improvement in the quantum efficiency of silicon photodetectors at near IR wavelengths by edge illumination
- 15 October 1983
- journal article
- Published by Optica Publishing Group in Applied Optics
- Vol. 22 (20), 3297-3299
- https://doi.org/10.1364/ao.22.003297
Abstract
The concept of illuminating a silicon photodetector along an edge to increase the light propagation path through the depletion region and thus to increase quantum efficiency at near IR wavelengths is introduced. Quantum efficiency measurements using both a GaAlAs laser and a He–Ne laser are included. These measurements show an improvement in quantum efficiency at λ = 0.83 μm for edge illumination over normal incidence of 75% for a photodiode and of 142% for a MOS capacitor photosensor.This publication has 4 references indexed in Scilit:
- Photodetectors for acousto-optic signal processorsProceedings of the IEEE, 1981
- Examination of CCDs using voltage contrast with a scanning electron microscopeSolid-State Electronics, 1980
- Anisotropic Etching of SiliconJournal of Applied Physics, 1969
- Intrinsic Optical Absorption in Single-Crystal Germanium and Silicon at 77°K and 300°KPhysical Review B, 1955