GaInAsP/InP SBH surface emitting laser with Si/Al2O3 mirror
- 17 August 1995
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 31 (17), 1449-1451
- https://doi.org/10.1049/el:19950985
Abstract
An Si/Al2O3 mirror has been introduced into the p-side mirror of a 1.3 µm GaInAsP/InP square buried heterostructure (SBH) surface emitting (SE) laser to decrease thermal resistance. The low threshold pulsed oscillation (threshold current Ith = 12 mA) has been obtained for an 8 × 8 µm device at room temperature. Its threshold current density was ~18 kA/cm2. Near room temperature (13°C) CW oscillation for another chip has also been realised.Keywords
This publication has 6 references indexed in Scilit:
- 1.3 μm GaInAsP/InP square buried heterostructure vertical cavity surface emitting laser grown by all MOCVDPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Low threshold, wafer fused long wavelength vertical cavity lasersApplied Physics Letters, 1994
- Near room temperature continuous wave lasing characteristics of GaInAsP/InP surface emitting laserElectronics Letters, 1993
- Low-threshold, high-temperature pulsed operation of InGaAsP/InP vertical cavity surface emitting lasersIEEE Photonics Technology Letters, 1991
- Consideration on threshold current density of GaInAsP/InP surface emitting junction lasersIEEE Journal of Quantum Electronics, 1986
- GaInAsP/InP Surface Emitting Injection LasersJapanese Journal of Applied Physics, 1979