Transport Properties of Parallel Multiple Ballistic Point Contacts
- 1 February 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (2A), L368-370
- https://doi.org/10.1143/jjap.29.l368
Abstract
Parallel multiple ballistic point contacts are fabricated using the highly resistive region induced by focused Ga ion beam scanning. The fabricated structure is controlled by a single Schottky gate electrode placed upon it. Quantized currents of µA order are obtained in the fabricated structures.Keywords
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