20-Gb/s monolithic p-i-n/HBT photoreceiver module for 1.55-μm applications
- 1 October 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 7 (10), 1201-1203
- https://doi.org/10.1109/68.466590
Abstract
A photoreceiver, composed of a p-i-n photodetector monolithically integrated with an InP-InGaAs heterojunction bipolar transistor (HBT)-based transimpedance amplifier, has been fabricated from metal-organic molecular beam epitaxy (MOMBE) material. The fiber-pigtailed module has measured sensitivities of -20.4 dBm and -17.0 dBm for data rates of 10 Gb/s and 20 Gb/s, respectively, at a bit-error-rate of 1×10/sup -9/. High-speed operation has been achieved with modest (3 μm) device dimensions. These results are the best ever reported for an OEIC photoreceiver at these speeds.Keywords
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