Energy levels for platinum and palladium in silicon measured by the dark transient capacitance technique
- 16 June 1976
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 35 (2), 533-543
- https://doi.org/10.1002/pssa.2210350215
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Energy levels and concentrations for platinum in siliconSolid-State Electronics, 1975
- Experiments on the origin of process−induced recombination centers in siliconJournal of Applied Physics, 1975
- Properties of Au, Pt, Pd and Rh levels in silicon measured with a constant capacitance techniqueSolid-State Electronics, 1974
- Quenched-in centers in silicon p+n junctionsSolid-State Electronics, 1974
- New methods for carrier lifetime measurements in PπN structuresSolid-State Electronics, 1973
- Electrical properties of silicon doped with platinumSolid-State Electronics, 1970
- Recombination in silicon p−π−n diodesSolid-State Electronics, 1967
- Gold as a recombination centre in siliconSolid-State Electronics, 1965
- Spin Resonance of Pd and Pt in SiliconPhysical Review B, 1962
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952