AlGaN∕GaN HEMTs on Si substrate with 7 W∕mm output power density at 10 GHz
- 1 January 2004
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 40 (16), 1023-1024
- https://doi.org/10.1049/el:20045292
Abstract
The first 10 GHz power performance of AlGaN/GaN HEMTs on silicon substrate is reported. Molecular beam epitaxy grown AlGaN/GaN heterostructure and field-plate gates with 0.3 µm length are employed to fabricate the devices on 2-inch Si (111) substrates. A maximum current density of 850 mA/mm and an extrinsic transconductance of 220 mS/mm are achieved. Load pull measurements at 10 GHz demonstrate a continuous-wave output power density of 7 W/mm, which is the highest power density reported to date for an Si-based transistor. A peak power added efficiency of 52% is achieved for these devices at 10 GHz.This publication has 6 references indexed in Scilit:
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