10-W/mm AlGaN-GaN HFET with a field modulating plate
- 9 July 2003
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 24 (5), 289-291
- https://doi.org/10.1109/led.2003.812532
Abstract
AlGaN-GaN heterojunction field-effect transistors (HFETs) with a field modulating plate (FP) were fabricated on an SiC substrate. The gate-drain breakdown voltage (BV/sub gd/) was significantly improved by employing an FP electrode, and the highest BV/sub gd/ of 160 V was obtained with an FP length (L/sub FP/) of 1 μm. The maximum drain current achieved was 750 mA/mm, together with negligibly small current collapse. A 1-mm-wide FP-FET (L/sub FP/=1 μm) biased at a drain voltage of 65 V demonstrated a continuous wave saturated output power of 10.3 W with a linear gain of 18.0 dB and a power-added efficiency of 47.3% at 2 GHz. To our knowledge, the power density of 10.3 W/mm is the highest ever achieved for any FET of the same gate size.Keywords
This publication has 9 references indexed in Scilit:
- Ka-band 2.3W power AlGaN/GaN heterojunction FETPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- A 36 W CW AlGaN/GaN-power HEMT using surface-charge-controlled structurePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Novel high power AlGaAs/GaAs HFET with a field-modulating plate operated at 35 V drain voltagePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Bias-dependent performance of high-power AlGaN/GaN HEMTsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A 50-W AlGaN/GaN HEMT amplifierPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- GaN HFET technology for RF applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- High breakdown voltage GaN HFET with field plateElectronics Letters, 2001
- High breakdown GaN HEMT with overlapping gate structureIEEE Electron Device Letters, 2000
- High performance microwave power GaN/AlGaN MODFETs grown by RF-assisted MBEElectronics Letters, 2000