A new charge-pumping technique for profiling the interface-states and oxide-trapped charges in MOSFETs
- 1 January 2000
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 47 (2), 348-353
- https://doi.org/10.1109/16.822279
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
- Investigation of oxide charge trapping and detrapping in a MOSFET by using a GIDL current techniqueIEEE Transactions on Electron Devices, 1998
- A novel experimental technique for the lateral profiling of oxide and interface state charges in hot-hole degraded n-MOSFETsIEEE Electron Device Letters, 1998
- A novel charge-pumping method for extracting the lateral distributions of interface-trap and effective oxide-trapped charge densities in MOSFET devicesIEEE Transactions on Electron Devices, 1997
- Extraction of metal-oxide-semiconductor field-effect-transistor interface state and trapped charge spatial distributions using a physics-based algorithmJournal of Applied Physics, 1997
- Features and mechanisms of the saturating hot-carrier degradation in LDD NMOSFETsIEEE Transactions on Electron Devices, 1996
- A novel extraction technique for the effective channel length of MOSFET devicesIEEE Transactions on Electron Devices, 1995
- Lateral profiling of oxide charge and interface traps near MOSFET junctionsIEEE Transactions on Electron Devices, 1993
- A new charge pumping method for determining the spatial distribution of hot-carrier-induced fixed charge in p-MOSFETsIEEE Transactions on Electron Devices, 1993
- New device degradation due to 'cold' carriers created by band-to-band tunnelingIEEE Electron Device Letters, 1989
- Drain-avalanche and hole-trapping induced gate leakage in thin-oxide MOS devicesIEEE Electron Device Letters, 1988