Piezoelectric thin films of rf-sputtered Bi12PbO19
- 1 July 1976
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 47 (7), 2901-2902
- https://doi.org/10.1063/1.323068
Abstract
Thin films of Bi12PbO19, one of the γ‐Bi2O3 family, were prepared on glass and Si substrates by rf sputtering. Films of γ‐phase Bi12PbO19 were obtained at the substrate temperature of 450–600 °C. The films were found to be highly oriented with the 〈310〉 axis normal to the substrate surface and exhibited piezoelectricity. The electromechanical coupling factors for the longitudinal mode measured were 0.16–0.22 with the phase velocities of 3600–3800 m/sec.Keywords
This publication has 10 references indexed in Scilit:
- Highly-oriented ZnO films by rf sputtering of hemispherical electrode systemJournal of Applied Physics, 1976
- Structures and Optical Properties of Rf‐Sputtered Bi12GeO20 FilmsJournal of the Electrochemical Society, 1976
- The acoustic properties of oxide films and their application to acoustic surface wave devicesJournal of Solid State Chemistry, 1975
- Theory of interdigital couplers on nonpiezoelectric substratesJournal of Applied Physics, 1973
- Elastic, Piezoelectric, and Dielectric Constants of Bi12 GeO20Journal of Applied Physics, 1972
- Structures and electrical properties of zinc oxide films prepared by low pressure sputtering systemThin Solid Films, 1971
- The unit cell and space group of piezoelectric bismuth germanium oxide (Bi12GeO20)Journal of Crystal Growth, 1967
- The growth and properties of piezoelectric bismuth germanium oxide Bi12GeO20Journal of Crystal Growth, 1967
- Polymorphism of bismuth sesquioxide. II. Effect of oxide additions on the polymorphism of Bi2O3Journal of Research of the National Bureau of Standards Section A: Physics and Chemistry, 1964
- Über Wismutoxide. III. Die Kristallstruktur der Hochtemperaturmodifikation von Wismut(III)‐oxid (δ‐Bi2O3)Zeitschrift für anorganische und allgemeine Chemie, 1962