The Formation and Cathodoluminescence Activity of Buffer Layer Edge Dislocations in In0.12Ga0.88As/GaAs Heterostructures
- 1 January 1987
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Lattice-strained heterojunction InGaAs/GaAs bipolar structures: Recombination properties and device performanceJournal of Applied Physics, 1987
- An In0.15Ga0.85As/GaAs pseudomorphic single quantum well HEMTIEEE Electron Device Letters, 1985
- In0.14Ga0.86As Solar Cells Grown by Molecular-Beam EpitaxyJapanese Journal of Applied Physics, 1985
- Nonradiative recombination at dislocations in III–V compound semiconductorsJournal of Microscopy, 1980