In0.14Ga0.86As Solar Cells Grown by Molecular-Beam Epitaxy
- 1 May 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (5R)
- https://doi.org/10.1143/jjap.24.636
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
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- Ga0.80In0.20As 1.20-eV high quantum efficiency junction for multijunction solar cellsApplied Physics Letters, 1982
- Application of scanning electron microscopy to determination of surface recombination velocity: GaAsApplied Physics Letters, 1975