Nonequilibrium transport of an electron-phonon-hole system in a semiconductor quantum well

Abstract

The recently developed transport theory of two-dimensional carriers has been applied to an electron-lattice-hole system with an applied electric field in GaAs-${\mathrm{Ga}}_{1\mathrm{-}\mathrm{x}}$ ${\mathrm{Al}}_{\mathrm{x}}$As heterojunction. The renormalized carrier-carrier coupled potentials and the renormalized carrier-phonon coupled potentials (including hole-lattice deformation potential) are derived in the ring diagram approximation. Force and energy balance equations of electrons and holes are obtained by a nonequilibrium density operator technique. These four balance equations are solved numerically in the steady state. The result shows that the electrons are heated in the applied electric field much more than the holes and the electron-hole interaction enhances the energy and momentum loss rate of electrons. These results are in agreement with recently experimental data.