Evidence for Hole-To-Phonon Interaction from Tunneling Measurements in GaAs-Pb Junctions

Abstract

Structure in $\frac{d^{2}I}{d{V}^2}$ symmetrical about zero bias is observed in $p$-type GaAs-Pb junctions at bias energies equal to the transverse optical phonon energy of bulk GaAs. This is interpreted as due to hole-TO-phonon interaction through a deformation potential coupling in bulk GaAs.