Low-temperature fabrication of high-mobility poly-Si TFTs for large-area LCDs
- 1 September 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 36 (9), 1929-1933
- https://doi.org/10.1109/16.34272
Abstract
A low-temperature process developed for fabrication of high-mobility polycrystalline silicon thin-film transistors (poly-Si TFTs) is discussed. Its main feature is the use of a sputter-deposited Si film followed by laser irradiation and a sputter-deposited gate SiO/sub 2/ film. The poly-Si TFTs have a mobility of 350-cm/sup 2//V-s. They have been successfully applied to peripheral circuits for large-area liquid-crystal displays (LCDs).<>Keywords
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