Epitaxial growth of silicon from SiH4 in the temperature range 800–1150°C
- 31 January 1973
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 16 (1), 39-IN3
- https://doi.org/10.1016/0038-1101(73)90123-8
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Low-Temperature Epitaxial Growth of Single Crystalline Silicon from SilaneJournal of the Electrochemical Society, 1969
- Crystal Growth of a New Laser Material, FluorapatiteJournal of the Electrochemical Society, 1968
- Low-Temperature Silicon EpitaxyJournal of the Electrochemical Society, 1968
- Epitaxial Deposition of Silicon Layers by Pyrolysis of SilaneJournal of the Electrochemical Society, 1964
- Epitaxial Growth of Silicon from the Pyrolysis of Monosilane on Silicon SubstratesJournal of the Electrochemical Society, 1963