Theory of exciton dephasing in semiconductor quantum dots
- 15 July 1999
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 60 (4), 2638-2652
- https://doi.org/10.1103/physrevb.60.2638
Abstract
We formulate a theory of exciton dephasing in semiconductor quantum dots extending the Huang-Rhys theory of F centers to include the mixing among the exciton state manifold through the exciton-acoustic-phonon interaction and we identify the mechanisms of pure dephasing. We can reproduce quantitatively the magnitude as well as the temperature dependence of the exciton dephasing rate observed in GaAs quantum dotlike islands. In this system it turns out that both the diagonal and off-diagonal exciton-phonon interactions are contributing to the exciton pure dephasing on the same order of magnitude. Examining the previous data of the exciton dephasing rate in GaAs islands, CuCl and CdSe nanocrystals, we point out the correlation between the temperature dependence of the dephasing rate and the strength of the quantum confinement and we explain the gross features of the temperature dependence in various materials quantum dots. Furthermore, we discuss likely mechanisms of the exciton population decay.Keywords
This publication has 26 references indexed in Scilit:
- Pure dephasing induced by exciton–phonon interactions in narrow GaAs quantum wellsSolid State Communications, 1998
- Homogeneous Linewidths in the Optical Spectrum of a Single Gallium Arsenide Quantum DotScience, 1996
- Fine Structure Splitting in the Optical Spectra of Single GaAs Quantum DotsPhysical Review Letters, 1996
- Sharp-Line Photoluminescence and Two-Photon Absorption of Zero-Dimensional Biexcitons in a GaAs/AlGaAs StructurePhysical Review Letters, 1994
- Near-Field Spectroscopy of the Quantum Constituents of a Luminescent SystemScience, 1994
- Excitonic relaxation processes in quantum well structuresJournal of Luminescence, 1989
- Optical dephasing of homogeneously broadened two-dimensional exciton transitions in GaAs quantum wellsPhysical Review B, 1986
- Localization and homogeneous dephasing relaxation of quasi-two-dimensional excitons in quantum-well heterostructuresPhysical Review B, 1985
- Studies of exciton localization in quantum-well structures by nonlinear-optical techniquesJournal of the Optical Society of America B, 1985
- Theory of light absorption and non-radiative transitions in F -centresProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1950