Defect structure in III-V compound semiconductors: Generation and evolution of defect structures in InGaAs and InGaAsP epitaxial layer grown by hydride transport vapor-phase epitaxy

Abstract

The generation and evolution of a novel defect structure in InGaAs single‐layer and InGaAsP/InP multilayer laser structures grown by hydride transport vapor‐phase epitaxy on (001)InP substrate has been studied in detail using both cross‐section and plan‐view transmission electron microscopy. Under certain growth conditions, a unique defect structure consisting of a dislocation tangle initiated at the InGaAs/InP interface, having the shape of a pyramid, followed by a bundle of straight dislocations propagating through the InGaAs epitaxial layer near [001] growth direction and along 〈112〉 orientations, is formed. Such defect structure is universal to these materials grown from vapor sources. The pyramidal‐dislocation tangles, or <named-content xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance"...