Nonradiative Recombination at Dislocations in III-V Compound Semiconductors

Abstract

A study of the nonradiative carrier recombination at individual interfacial dislocations between ${\mathrm{Ga}}_{1-x}{\mathrm{Al}}_x{\mathrm{As}}_{1-y}{\mathrm{P}}_y$ epitaxial films provides new information on the dislocation core structure. New analytical techniques allow to correlate the nonradiative and recombination properties of dislocations with their fine crystallographic configuration. The edge sessile dislocation is found to be electrically neutral. The absence of carrier recombination leads to a reconstructed core model with no dangling bonds.