Self-aligned n-channel metal-oxide-semiconductor field effect transistor on high-indium-content In0.53Ga0.47As and InP using physical vapor deposition HfO2 and silicon interface passivation layer

Abstract

In this work, we present the electrical and material characteristics of $\mathrm{TaN}∕\mathrm{Hf}{\mathrm{O}}_2∕{\mathrm{In}}_{0.53}{\mathrm{Ga}}_{0.47}\mathrm{As}$ and InP substrate metal-oxide-semiconductor capacitors and self-aligned $n$ -channel metal-oxide-semiconductor field effect transistor ($n$ -MOSFET) with physical vapor deposition Si interface passivation layer. Excellent electrical characteristics, thin equivalent oxide thickness $(\sim 1.7\mathrm{nm})$ , and small frequency dispersion $(<2\%)$ were obtained. $n$ -channel high-$k$ InGaAs- and InP-MOSFETs with good transistor behavior and good split capacitance-voltage $\left(C\text{-}V\right)$ characteristics on ${\mathrm{In}}_{0.53}{\mathrm{Ga}}_{0.47}\mathrm{As}$ and InP substrates have also been demonstrated.