Ti O 2 anatase nanolayer on TiN thin film exhibiting high-speed bipolar resistive switching
- 27 November 2006
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 89 (22), 223509
- https://doi.org/10.1063/1.2397006
Abstract
The surface oxidized layer of a TiN barrier metalthin film grown on a Pt electrode was used as a resistive switching material. The fabricated memory cell shows bipolar resistive switching on a nanosecond order. A Ti O 2 anatase layer of about 2.5 nm thick on TiN thin film was characterized by high-resolution scanning transmission electron microscopy. The results suggested that the high-speed resistive change was derived from the Mott transition in the Ti O 2 anatase nanolayer, and the obtained results could relate to the formation of filament paths previously reported in binary transition metal oxide thin films exhibiting resistive switching.Keywords
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