Separation of bulk and interface contributions to electroforming and resistive switching behavior of epitaxial Fe-doped SrTiO3
- 15 March 2009
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 105 (6), 066104
- https://doi.org/10.1063/1.3100209
Abstract
We succeeded in the separation of bulk and interface contributions to the electroforming and resistive switching behavior of Pt/STO(Fe)/Nb:STO devices by performing impedance spectroscopy. Two distinctive features observed in the impedance spectra could be assigned to the STO(Fe) bulk and to the depletion layer of the Pt/STO(Fe) Schottky contact. We attribute the resistance change during the dc forming process to a local bypassing of the depletion layer caused by oxygen effusion to the environment. By comparing the impedance spectra in the resistive “on” and “off” states, we propose that the resistance of the STO(Fe)/Nb:STO interface locally changes during the switching process.Keywords
This publication has 17 references indexed in Scilit:
- Memristive switching mechanism for metal/oxide/metal nanodevicesNature Nanotechnology, 2008
- Resistive switching in transition metal oxidesMaterials Today, 2008
- Nanoionics-based resistive switching memoriesNature Materials, 2007
- Role of Oxygen Vacancies in Cr‐Doped SrTiO3 for Resistance‐Change MemoryAdvanced Materials, 2007
- Nanoscale resistive switching in SrTiO3 thin filmsPhysica Status Solidi (RRL) – Rapid Research Letters, 2007
- Mesoscopic Hole Conduction in Nanocrystalline SrTiO[sub 3]Journal of the Electrochemical Society, 2007
- Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3Nature Materials, 2006
- Localized Metallic Conductivity and Self-Healing during Thermal Reduction ofPhysical Review Letters, 2002
- Electrochemical Investigations of SrTiO3 BoundariesJournal of the Electrochemical Society, 1997
- dc Electrical Degradation of Perovskite‐Type Titanates: III, A Model of the MechanismJournal of the American Ceramic Society, 1990