Thermal conversion and hydrogenation effects in AlGaAs
- 1 September 1988
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 64 (5), 2772-2774
- https://doi.org/10.1063/1.341627
Abstract
Thermal conversion of molecular-beam epitaxially (MBE) grown AlGaAs from semi-insulating to p-type caused by annealing has been studied using Hall-effect and photoluminescence measurements. The presence of C impurities causes thermal conversion of the AlGaAs layers. A key observation is that residual C impurities can be greatly reduced by increasing growth temperature. Thermodynamic evaluation of adsorption kinetics suggests that C incorporation during AlGaAs MBE is chemisorptive. The effects of hydrogenation in MBE AlGaAs have also been studied and indicate that thermally activated C acceptors and nonradiative recombination centers can be passivated with this treatment.Keywords
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