Transient photoconductivity studies of the light soaked state of hydrogenated amorphous silicon
- 15 March 1983
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 42 (6), 507-509
- https://doi.org/10.1063/1.93984
Abstract
Studies of transient photoconductivity show that the primary effect of light soaking in hydrogenated amorphous silicon is to introduce dangling bonds of bulk density 1016–1017 cm−3. Light soaking reduces the μτ product of both electrons and holes to values which are quantitatively related to the observed increase in the dangling bond electron spin resonance (ESR) spin density. In addition, no change in the carrier drift mobilities is detected after light soaking.Keywords
This publication has 10 references indexed in Scilit:
- Trapping parameters of dangling bonds in hydrogenated amorphous siliconApplied Physics Letters, 1982
- Doping and the Fermi Energy in Amorphous SiliconPhysical Review Letters, 1982
- Spin-dependent photoconductivity in undoped a-Si: HPhilosophical Magazine Part B, 1982
- Deep electron traps in hydrogenated amorphous siliconPhysical Review B, 1981
- Stability of n-i-p amorphous silicon solar cellsApplied Physics Letters, 1981
- Light-induced dangling bonds in hydrogenated amorphous siliconApplied Physics Letters, 1981
- Light-induced radiative recombination centers in hydrogenated amorphous siliconApplied Physics Letters, 1980
- Luminescence studies of plasma-deposited hydrogenated siliconPhysical Review B, 1978
- Influence of interface charges on transport measurements in amorphous silicon filmsJournal de Physique, 1978
- Reversible conductivity changes in discharge-produced amorphous SiApplied Physics Letters, 1977