Trapping parameters of dangling bonds in hydrogenated amorphous silicon

Abstract

The mobility, lifetime, and capture cross sections for the trapping of electrons and holes at dangling bond defects in a-Si:H are measured using time-of-flight transient photoconductivity. The magnitude obtained for the product μτNs is 3.5×108±25% cm−1 V−1 and 4×107±50% cm−1 V−1 for electrons and holes, respectively. The capture cross section is 4×10−15 cm2 for electrons and about 2×10−15 cm2 for holes. The results are consistent with the amphoteric nature of neutral dangling bonds.