Effects of deposition temperature and hydrogen evolution on light-induced defects in a-Si:H
- 1 December 1985
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 77-78, 401-404
- https://doi.org/10.1016/0022-3093(85)90684-2
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Kinetics of the Staebler–Wronski effect in hydrogenated amorphous siliconApplied Physics Letters, 1984
- Light-induced dangling bonds in hydrogenated amorphous siliconApplied Physics Letters, 1981
- Proton nmr studies of annealed plasma-deposited amorphous Si:H filmsSolid State Communications, 1981
- Reversible conductivity changes in discharge-produced amorphous SiApplied Physics Letters, 1977