Kinetics of the Staebler–Wronski effect in hydrogenated amorphous silicon
- 15 November 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (10), 1075-1077
- https://doi.org/10.1063/1.95020
Abstract
We have investigated the time and intensity dependence of the creation process for light-induced metastable defects (Staebler–Wronski effect) in hydrogenated amorphous silicon (a-Si:H). The observed changes in electron spin resonance spin density (dangling bonds) and photoconductivity are consistent with a model which explains the Staebler–Wronski effect as a self-limiting process intrinsic to a-Si:H. A possible microscopic mechanism based on the nonradiative recombination of band tail carriers is discussed.Keywords
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