Piezomodulated electronic spectra of semiconductor heterostructures: GaAs/AlxGa1−xAs quantum well structures
- 9 March 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (10), 600-602
- https://doi.org/10.1063/1.98093
Abstract
Optical transitions associated with the electronic levels of a single quantum well in GaAs/AlxGa1−xAs heterostructures are observed with exceptional clarity in the piezomodulated reflectivity spectrum measured down to liquid helium temperature. The splitting of such transitions in multiple quantum well structures due to the coupling of the electronic levels in the adjacent wells is illustrated with results on a double quantum well.Keywords
This publication has 10 references indexed in Scilit:
- Temperature dependence of photoreflectance in GaAs-AlGaAs multiple quantum wellsSurface Science, 1986
- Limits on band discontinuities in GaAs-GaAlAs heterostructures deduced from optical photoresponseJournal of Physics C: Solid State Physics, 1985
- Photoreflectance characterization of interband transitions in GaAs/AlGaAs multiple quantum wells and modulation-doped heterojunctionsApplied Physics Letters, 1985
- Electronic states and thicknesses of GaAs/GaAlAs quantum wells as measured by electroreflectance and spectroscopic ellipsometryJournal of Applied Physics, 1984
- Energy-gap discontinuities and effective masses for quantum wellsPhysical Review B, 1984
- Raman Scattering Resonant with Quasi-Two-Dimensional Excitons in Semiconductor Quantum WellsPhysical Review Letters, 1983
- Luminescence studies of optically pumped quantum wells in GaAs-multilayer structuresPhysical Review B, 1980
- Quantum States of Confined Carriers in Very Thin -GaAs- HeterostructuresPhysical Review Letters, 1974
- Acceptor levels in gallium arsenide (luminescence measurements)Journal of Physics C: Solid State Physics, 1973
- Reflectance Modulation by the Surface Field in GaAsPhysical Review Letters, 1968