Influence of substrate orientation on surface segregation process in silicon-MBE
- 30 December 1989
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 183 (1-2), 315-322
- https://doi.org/10.1016/0040-6090(89)90456-2
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- MBE-Related Surface Segregation of Dopant Atoms in SiliconJapanese Journal of Applied Physics, 1988
- Controlled Atomic Layer Doping and ALD MOSFET Fabrication in SiJapanese Journal of Applied Physics, 1987
- RHEED studies of Si(100) surface structures induced by Ga evaporationSurface Science, 1981
- Arbitrary doping profiles produced by Sb-doped Si MBEApplied Physics Letters, 1978