Arbitrary doping profiles produced by Sb-doped Si MBE
- 1 October 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 33 (7), 654-656
- https://doi.org/10.1063/1.90453
Abstract
Arbitrary doping profiles with abrupt transitions have been produced in n‐type Si MBE films. Changes in doping level were produced with a resolution unattainable by CVD growth and at depths inaccessible to ion implantation. It was found, however, that films must be grown above ∼850 °C. Below that temperature doping profiles were distorted and Sb segregated strongly on the sample surface.Keywords
This publication has 7 references indexed in Scilit:
- Si Molecular Beam Epitaxy (n on n+) with Wide Range Doping ControlJournal of the Electrochemical Society, 1977
- Acceptor dopants in silicon molecular-beam epitaxyJournal of Applied Physics, 1977
- Dependence of residual damage on temperature during Ar+ sputter cleaning of siliconJournal of Applied Physics, 1977
- Operation of a cryopumped UHV systemJournal of Vacuum Science and Technology, 1977
- Impurity profiles of GaAs epitaxial layers doped with Sn, Si, and Ge grown with molecular beam epitaxyJournal of Applied Physics, 1975
- A feedback method for investigating carrier distributions in semiconductorsIEEE Transactions on Electron Devices, 1972
- The influence of debye length on the C-V measurement of doping profilesIEEE Transactions on Electron Devices, 1971