Construction of GaAs Spin-Polarized Electron Source and Measurements of Electron Polarization
- 1 May 1986
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 25 (5R)
- https://doi.org/10.1143/jjap.25.766
Abstract
A simple and compact system for generation and detection of polarized electrons is constructed. Polarized electrons are extracted from negative electron affinity (NEA) surface of GaAs by optical pumping with circulary polarized light from GaAlAs laser diode. The maximum degree of the electron polarization measured by 90 keV Mott analyzer is about ±10%.Keywords
This publication has 3 references indexed in Scilit:
- Spin polarized photoemission from molecular beam epitaxy-grown be-doped GaAsZeitschrift für Physik B Condensed Matter, 1981
- Face dependence of the spin polarization of photoelectrons from NEA GaAs (100) and (110)Applied Physics Letters, 1979
- Photoemission of spin-polarized electrons from GaAsPhysical Review B, 1976