Spin polarized photoemission from molecular beam epitaxy-grown be-doped GaAs
- 1 December 1981
- journal article
- research article
- Published by Springer Nature in Zeitschrift für Physik B Condensed Matter
- Vol. 44 (4), 259-264
- https://doi.org/10.1007/bf01294161
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- High Intensity Polarized Electron SourcesPublished by Springer Nature ,1981
- Optical Measurement of Free-Electron PolarizationPhysical Review Letters, 1980
- The GaAs spin polarized electron sourceReview of Scientific Instruments, 1980
- Production of spin-polarized electrons by photoemission from GaAs(110)Physical Review B, 1979
- Symmetry in Low-Energy-Polarized-Electron DiffractionPhysical Review Letters, 1979
- Auger and TEM Studies on the Contamination of Chemically Prepared GaAs Substrate SurfacesPublished by Springer Nature ,1979
- Depolarization of photoelectrons emitted from optically pumped GaAsApplied Physics Letters, 1978
- The face dependence of the emission of electrons from GaAs activated to negative electron affinityJournal of Physics D: Applied Physics, 1977
- Photoemission of spin-polarized electrons from GaAsPhysical Review B, 1976
- Dependence on Crystalline Face of the Band Bending in Cs2 O-Activated GaAsJournal of Applied Physics, 1971