InAsSbP/InAs LEDs for the 3.3–5.5 µm spectral range
- 1 October 1998
- journal article
- Published by Institution of Engineering and Technology (IET) in IEE Proceedings - Optoelectronics
- Vol. 145 (5), 254-256
- https://doi.org/10.1049/ip-opt:19982303
Abstract
Room-temperature LEDs, fabricated from LPE grown InAsSb(P)/InAs heterostructures, are characterised with respect to methane (3.3 µm), carbon dioxide (4.3 µm) and nitric oxide (5.3 µm) optical detection. Output power as high as 50 µW (I = 1 A, 128 µs) and FWHM as small as 0.6 µm have been obtained for the first reported InAsSb LED emitting at 5.5 µm.Keywords
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