Self-sustained pulsations and negative-resistance behavior in InGaAsP (λ=1.3 μm) double-heterostructure lasers

Abstract

Self‐sustained pulsations, superlinear emission, and negative‐resistance behavior are reported for InGaAsP (λ=1.3 μm) double‐heterostructure lasers. For nitride‐stripe devices the incidence rate for pulsations is approximately 40%. Nearly 50% of these pulsating devices exhibit a light output with a large differential quantum efficiency over a small current range. These light jumps are associated with a negative‐resistance behavior, as observed in the electrical derivative I dV/dI, and with pulsations. Studies of buried‐waveguide devices show a much lower incidence rate of pulsations in these refractive‐index‐guided structures. Superlinear emission and negative‐resistance behavior have not been observed in these buried‐waveguide lasers.