Self-sustained pulsations and negative-resistance behavior in InGaAsP (λ=1.3 μm) double-heterostructure lasers
- 1 November 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 37 (9), 769-771
- https://doi.org/10.1063/1.92082
Abstract
Self‐sustained pulsations, superlinear emission, and negative‐resistance behavior are reported for InGaAsP (λ=1.3 μm) double‐heterostructure lasers. For nitride‐stripe devices the incidence rate for pulsations is approximately 40%. Nearly 50% of these pulsating devices exhibit a light output with a large differential quantum efficiency over a small current range. These light jumps are associated with a negative‐resistance behavior, as observed in the electrical derivative I dV/dI, and with pulsations. Studies of buried‐waveguide devices show a much lower incidence rate of pulsations in these refractive‐index‐guided structures. Superlinear emission and negative‐resistance behavior have not been observed in these buried‐waveguide lasers.Keywords
This publication has 10 references indexed in Scilit:
- Statistical characterization of the self-induced intensity modulation exhibited by AlGaAs junction lasers with proton stripesApplied Physics Letters, 1980
- Observations of negative resistance associated with superlinear emission characteristics of (Al, Ga) As double-heterostructure lasersIEEE Journal of Quantum Electronics, 1980
- High-output power InGaAsP (λ=1.3 μm) strip-buried heterostructure lasersApplied Physics Letters, 1980
- Self-sustained pulsations in GaInAsP diode lasersApplied Physics Letters, 1980
- Intensity Pulsation Enhancement by Self-Focusing in Semiconductor Injection LasersJapanese Journal of Applied Physics, 1980
- Study of intensity pulsations in proton-bombarded stripe-geometry double-heterostructure AlxGa1−xAs lasersJournal of Applied Physics, 1979
- Pulsations and absorbing defects in (Al,Ga)As injection lasersJournal of Applied Physics, 1979
- Saturable absorption effects in the self-pulsing (AlGa)As junction laserApplied Physics Letters, 1979
- 1.3 µm CW Operation of GaInAsP/InP DH Diode Lasers at Room TemperatureJapanese Journal of Applied Physics, 1977
- Room-temperature cw operation of GaInAsP/InP double-heterostructure diode lasers emitting at 1.1 μ mApplied Physics Letters, 1976