Electrical resistance measurements on cryocrystals in a diamond-anvil cell to 70 GPa
- 1 June 1987
- journal article
- Published by AIP Publishing in Review of Scientific Instruments
- Vol. 58 (6), 994-996
- https://doi.org/10.1063/1.1139588
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Pressure-induced metallization of BaSePhysical Review B, 1987
- Electrical transport measurements in a gasketed diamond anvil cell up to 18 GPaReview of Scientific Instruments, 1986
- Ion beam sputtering apparatus for fabrication of compositionally modulated materialsReview of Scientific Instruments, 1985
- Diamond anvil cell and cryostat for low-temperature optical studiesReview of Scientific Instruments, 1985
- Band-Overlap Metallization of BaTePhysical Review Letters, 1984
- Measuring the electrical resistance of metals to 40 GPa in the diamond-anvil cellReview of Scientific Instruments, 1983
- Diamond anvil cell and high-pressure physical investigationsReviews of Modern Physics, 1983
- Electrical resistance measurements at high pressure and low temperature using a diamond-anvil cellReview of Scientific Instruments, 1982
- Electrical resistivity measurements of conductors in the diamond-window, high-pressure cellReview of Scientific Instruments, 1981
- Specific volume measurements of Cu, Mo, Pd, and Ag and calibration of the ruby R1 fluorescence pressure gauge from 0.06 to 1 MbarJournal of Applied Physics, 1978