In situ characterization of microcrystalline silicon by time resolved microwave conductivity
- 1 May 1998
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 227-230, 1001-1005
- https://doi.org/10.1016/s0022-3093(98)00320-2
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Characterization of amorphous silicon films by contactless transient photoconductivity measurementsApplied Physics A, 1995
- Charge-carrier kinetics in semiconductors by microwave conductivity measurementsJournal of Applied Physics, 1995
- In-situ quality monitoring during the deposition of a-Si:H filmsApplied Surface Science, 1993
- Accurate determination of minority carrier- and lattice scattering-mobility in silicon from photoconductance decayJournal of Applied Physics, 1992
- Analysis of the interaction of a laser pulse with a silicon wafer: Determination of bulk lifetime and surface recombination velocityJournal of Applied Physics, 1987
- Coherent and incoherent reflection and transmission of multilayer structuresApplied Physics B Laser and Optics, 1986
- Comparative study of time-resolved conductivity measurements in hydrogenated amorphous siliconJournal of Applied Physics, 1985