Useful relations for highly sensitive sensors based on carrier concentration
- 16 March 1983
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 76 (1), K43-K48
- https://doi.org/10.1002/pssa.2210760159
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Increase of the sensitivity of devices based on carrier concentration effectsPhysica Status Solidi (a), 1982
- Magnetoconcentration effect at Auger recombination of current carriersPhysica Status Solidi (a), 1981
- Magnetoconcentration and related galvanomagnetic effects in non-intrinsic semiconductorsJournal of Physics C: Solid State Physics, 1980
- Transverse diffusion currents as an important source of error in magnetoresistance measurementsJournal of Physics C: Solid State Physics, 1978
- Study of recombination processes from the magnetoconcentration effectPhysica Status Solidi (a), 1975