Study of recombination processes from the magnetoconcentration effect
- 16 April 1975
- journal article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 28 (2), 633-645
- https://doi.org/10.1002/pssa.2210280230
Abstract
No abstract availableThis publication has 16 references indexed in Scilit:
- Negative magnetoresistance in asymmetric p+–i–n+ structuresPhysica Status Solidi (a), 1974
- Some electrical properties of the magnetic barrier layer effect in GePhysica Status Solidi (a), 1971
- Magnétorésistance anormale par effet de surface dans les semiconducteurs. Réponse en fréquence et durée de vie effective des porteursRevue de Physique Appliquée, 1971
- Effect of a Magnetic Field on Steady-State Charge Carrier DistributionJournal of Applied Physics, 1970
- Effects of Surface Recombination on the Transverse Magnetoresistance of Thin InSb LayersJournal of Applied Physics, 1970
- Magnetische sperrschicht an InSb und ihre steuerung mittels feld-effektSolid-State Electronics, 1970
- Injection of Current Carriers in Anisotropic Semiconductor Plates and the Magnetodiode EffectPhysica Status Solidi (b), 1968
- Electrical Pinch in Elastically Deformed GermaniumPhysica Status Solidi (b), 1966
- The Transport of Added Current Carriers in a Homogeneous SemiconductorPhysical Review B, 1953
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952