Evidence for a landé-factorg =2 in n-type inverted silicon MOSFET surfaces
- 1 September 1979
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 95 (1), 107-115
- https://doi.org/10.1002/pssb.2220950112
Abstract
No abstract availableKeywords
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