Electrical Properties of Focused-Ion-Beam Boron-Implanted Silicon
- 1 November 1983
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 22 (11A), L698-700
- https://doi.org/10.1143/jjap.22.l698
Abstract
Electrical properties of 16 keV, focused-ion-beam (FIB) (beam diameter: 1 µm, current density: 50 mA/cm2) boron-implanted silicon layers have been investigated as a function of beam scan speed and ion dose, and compared with those obtained by conventional implantation (current density: 0.4 µA/cm2). High electrical activation of the FIB implanted layers is obtained by annealing below 800°C as a result of the increase in amorphous zones created in the implanted layers. Amorphous zone overlapping is assumed to occur at FIB implantation doses of 3–4×1015 ions/cm2 from the results of electrical activation and the carrier profile of implanted regions annealed at low temperature, if beam scan speed is lowered to about 10-2 cm/s.Keywords
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