Investigation of the parameters which control the growth of {111} and {111} faces of GaAs by chemical vapour deposit
- 30 November 1980
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 50 (3), 663-674
- https://doi.org/10.1016/0022-0248(80)90012-3
Abstract
No abstract availableKeywords
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