Threshold characteristics and extended wavelength operation of GaAs1−x′Sbx′/ AlyGa1−yAs1−xSbx double-heterostructure lasers

Abstract

A normalized threshold current density J_th/d = 4.0 kA cm⁻² μm⁻¹ has been determined for pulsed broad‐area room‐temperature GaAs_1−x′Sb_x′/Al_yGa_1−yAs_1−xSb _x DH lasers of length 380 μm over a range of active‐layer thicknesses d. Thresholds as low as 1.2 kA cm⁻² and differential efficiencies up to 35% have been obtained in the wavelength range 0.99–1.06 μm. cw operation of stripe‐geometry lasers is also described.