A New Thermal-Oxidation Method for III-V Semiconductors
- 1 July 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (7A), L490-492
- https://doi.org/10.1143/jjap.23.l490
Abstract
A new thermal-oxidation method for III-V semiconductors that utilizes boiling water under high pressure conditions has been proposed and applied to InSb. The grown oxide has been characterized by RBS, AES and XPS measurements. The oxidation temperature was decreased below 200°C. The oxidized Sb distributed uniformly throughout the oxide and there was no pile-up of the Sb at the oxide-semiconductor interface. The resistivity of the oxide at 77 K was as high as 1014 Ωcm.Keywords
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