Evaluation of InSb MOS Structure with Thin Anodic Oxide
- 1 January 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (1A), L46
- https://doi.org/10.1143/jjap.23.l46
Abstract
Interface and electrical properties of thin anodic oxide of InSb with a thickness of 330 Å are described. The thin anodic oxide has about one order of magnitude smaller interface state densities than thick anodic oxide. Electrical insulation is excellent at 77 K and even at room temperature. A flat band voltage shift of C-V curve is small for the maximum fabrication process temperature of 120°C and drastically increases even for annealing in H2 gas at 200°C.Keywords
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