Flexible Non‐Volatile Ferroelectric Polymer Memory with Gate‐Controlled Multilevel Operation
- 9 August 2012
- journal article
- research article
- Published by Wiley in Advanced Materials
- Vol. 24 (44), 5910-5914
- https://doi.org/10.1002/adma.201201831
Abstract
A flexible field‐effect transistor with a poly(3‐hexylthiophene) (P3HT) active channel and a ferroelectric poly(vinlyidene fluoride‐co‐trifluoro ethylene) (PVDF‐TrFE) insulator exhibits gate‐voltage‐controllable multilevel non‐volatile memory characteristics with highly reliable data retention and endurance.Keywords
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