The flexible non-volatile memory devices using oxide semiconductors and ferroelectric polymer poly(vinylidene fluoride-trifluoroethylene)
- 4 July 2011
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 99 (1), 012901
- https://doi.org/10.1063/1.3608145
Abstract
We demonstrated flexible ferroelectric gate thin-film transistors (Fe-TFTs) with ferroelectric polymer poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] and amorphous indium gallium zinc oxide (a-IGZO) channel on the polyethylene-naphthalate (PEN) substrate. First, we confirm basic ferroelectric properties of the P(VDF-TrFE) film on the PEN substrate with various bending radius. Next, we fabricated Fe-TFTs with Al/120 nm-P(VDF-TrFE)/40 nm-IGZO top gate structure. Excellent electrical characteristics are demonstrated and nonvolatile memory function was confirmed with a memory window of 8.4 V. A subthreshold voltage swing of 400 mV/decade, Ion/Ioff ratio of more than 107 and the field-effect mobility of ∼1 cm2/Vs were obtained.Keywords
This publication has 10 references indexed in Scilit:
- Channel/ferroelectric interface modification in ZnO non-volatile memoryTFT with P(VDF-TrFE)polymerJournal of Materials Chemistry, 2010
- Effect of ZnO channel thickness on the device behaviour of nonvolatile memory thin film transistors with double-layered gate insulators of Al2O3and ferroelectric polymerJournal of Physics D: Applied Physics, 2009
- High‐Mobility Nonvolatile Memory Thin‐Film Transistors with a Ferroelectric Polymer Interfacing ZnO and Pentacene ChannelsAdvanced Materials, 2009
- Enhancing the retention properties of ZnO memory transistor by modifying the channel/ferroelectric polymer interfaceApplied Physics Letters, 2009
- Printed Nonvolatile Memory for a Sheet-Type Communication SystemIEEE Transactions on Electron Devices, 2009
- Low-voltage polymer field-effect transistors for nonvolatile memoriesApplied Physics Letters, 2005
- A polymer high-k dielectric insulator for organic field-effect transistorsJournal of Applied Physics, 2005
- All-polymer ferroelectric transistorsApplied Physics Letters, 2005
- High-performance solution-processed polymer ferroelectric field-effect transistorsNature Materials, 2005
- Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductorsNature, 2004