Time- and angle-resolved photoemission study of InP(110)
- 15 September 1985
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 32 (6), 3669-3675
- https://doi.org/10.1103/physrevb.32.3669
Abstract
Time- and angle-resolved ultraviolet photoemission spectroscopy was used to study electron dynamics in the picosecond time domain on photoexcited InP(110) surfaces. A transient population in the normally unoccupied surface state was observed in the photoemission spectra following excitation of a bulk carrier plasma. Electron energy and momentum distributions in the surface state were independently followed as the population decayed. Observed nonexponential decays of approximately 300 psec duration can be attributed to equilibration of the surface and bulk populations on a subpicosecond time scale, followed by diffusion of the bulk plasma away from the surface. Band-dispersion parameters for the surface band were obtained. The band minimum was found to lie 1.47 eV above the valence-band maximum at Γ¯, the center of the surface Brillouin zone, and the surface effective mass was found to be anisotropic with values of 0.20≤/≤0.24 along the 〈1¯10〉 direction, and 0.10≤/≤0.15 along the 〈001〉 direction.
Keywords
This publication has 13 references indexed in Scilit:
- Picosecond Time-Resolved Photoemission Study of the InP(110) SurfacePhysical Review Letters, 1985
- Subnanosecond pulsed laser annealing of Se-implanted InPApplied Physics Letters, 1983
- Auger recombination in direct-gap semiconductors: band-structure effectsJournal of Physics C: Solid State Physics, 1983
- Generation of 355-nm coherent radiationOptics Letters, 1983
- Surface states and surface resonances in InP, InAs, and InSbPhysical Review B, 1982
- Angle‐Resolved Photoemission as a Tool for the Study of SurfacesAdvances in Chemical Physics, 1982
- Electronic states on the relaxed (110) surface of GaAsSolid State Communications, 1979
- Electronic surface properties of Ga and In containing III–V compoundsJournal of Vacuum Science and Technology, 1977
- Electronic surface properties of III–V semiconductors: Excitonic effects, band-bending effects, and interactions with Au and O adsorbate layersJournal of Vacuum Science and Technology, 1976
- Concentration-dependent absorption and spontaneous emission of heavily doped GaAsJournal of Applied Physics, 1976