Subnanosecond pulsed laser annealing of Se-implanted InP

Abstract

Indium phosphide implanted with Se+ has been laser annealed with 70 ps pulses at both λ=0.53 and 1.06 μm. For doses of 1×1015 cm−2, activations of ∼70% with peak electron concentrations of 6×1019 cm−3 have been achieved, while for doses of 3×1015 cm−2, activations of 33% with peak electron concentrations of 1.2×1020 cm−3 were measured. The carrier depth profiles for the laser annealed samples are shallow while those for thermal annealing are broad compared to the as-implanted profiles. The morphology of the laser annealed spots is briefly discussed.