Quenched-in defects in laser annealed silicon
- 1 March 1982
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 40 (5), 418-420
- https://doi.org/10.1063/1.93124
Abstract
The generation of defects in Si by pulsed laser irradiation was studied by deep level transient spectroscopy. For irradiation with pulsed ruby laser, three defect levels at Ec −0.25 eV, Ec −0.32 eV, and Ec −0.49 eV were observed. These defects, which generate large leakage current at Schottky diodes, are attributed to quenched-in defects because their energy levels are very close to those generated by quenching-in silicon wafer from a resistance heated furnace. However, they can be annealed out by a thermal annealing in nitrogen ambient at 600 °C.Keywords
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